An advanced high voltage bipolar power transistor with extended RBSOA using 5 µm small emitter structures

A novel high voltage bipolar power switching transistor-has been developed. The transistor has 5 µm wide ring emitters with polysilicon resistors in a cell construction and a closemeshed base, using a two layer metalization technique. The blocking capability of VCBO- 1000 volts is not merely a number, but the device can be switched under full current (10A) up to this voltage. There is no second breakdown at switching the device above VCEO(550V) by negative base currents as high as the collector current. The storage time is less than 1 µs and the switching speed is a few 10 ns, i.e. comparable to MOSFETs.