• DocumentCode
    3556485
  • Title

    Novel submicron MOS devices by self-aligned nitridation of silicide (Sanicide)

  • Author

    Kaneko, H. ; Koyanagi, M. ; Shimizu, S. ; Kubota, Y. ; Kishino, S.

  • Author_Institution
    Hitachi Ltd.
  • Volume
    31
  • fYear
    1985
  • fDate
    1985
  • Firstpage
    208
  • Lastpage
    211
  • Abstract
    A new MOS technology with the following advantages has been investigated: TiSi2is formed by being self-aligned to source and drain regions by silicidation; and TiN is formed by self-aligned to contact regions by direct nitridation. TiSi2was prepared by two-step annealing to only form silicide on the diffused layers. TiN was formed by direct nitridation of TiSi2in N2at a temperature higher than 900 °C. The TiN formed using this method was found to be an effective diffusion barrier between Al and Si for annealing at up to 500 °C for 1 hour. PSG-cap annealing provided excellent p-n junction characteristics with a silicide layer of 4 Ω/□ even after annealing at 950 °C for 30 min. Characteristics of devices fabricated by this new technology were demonstrated.
  • Keywords
    Annealing; Conductivity; MOS devices; Microcomputers; P-n junctions; Silicidation; Silicides; Temperature; Tin; Titanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1985 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1985.190932
  • Filename
    1485482
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556485