DocumentCode
3556512
Title
A model-base comparison: GaAs/GaAlAs HBT versus silicon bipolar
Author
Kurata, Mamoru ; Katoh, Riichi ; Yoshida, Jiro ; Akagi, Junko
Author_Institution
Toshiba Corporation, Kawasaki-shi, Japan
Volume
31
fYear
1985
fDate
1985
Firstpage
306
Lastpage
309
Abstract
A pure model-base comparison is made between the GaAs/GaAlAs HBT and the silicon bipolar transistor for the high speed switching performance by utilizing a "physical" one-dimensional transistor model, a hybrid model to represent a real device structure, and our own circuit simulator to allow direct access to the physical model. Delay time versus power characteristics, as well as dynamic carrier profiles are demonstrated, with discussion about limiting factors for the switching speed.
Keywords
Aluminum; Bipolar transistors; Circuit simulation; Delay effects; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Research and development; Semiconductor process modeling; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.190958
Filename
1485508
Link To Document