• DocumentCode
    3556552
  • Title

    Deep-depletion CCDs with improved UV sensitivity

  • Author

    Bosiers, J.T. ; Saks, N.S. ; Michels, D.J. ; McCarthy, D. ; Peckerar, M.C.

  • Author_Institution
    Sachs-Freeman Associates, Inc., Landover, MD
  • Volume
    31
  • fYear
    1985
  • fDate
    1985
  • Firstpage
    448
  • Lastpage
    451
  • Abstract
    This paper presents results obtained on backside-illuminated deep-depletion CCDs developed for ultra-violet (UV) and X-ray imaging. Through appropriate backside treatments the CCD structure was optimized for high quantum efficiency in the UV-region of the spectrum. At 1216Å, where the photon absorption length is very short (∼70Å), a maximum quantum efficiency of 16-20% was obtained on the best devices as compared with less than 1% efficiency for devices without backside treatment.
  • Keywords
    Aluminum; Annealing; Charge coupled devices; Electromagnetic wave absorption; Implants; Laboratories; Optical imaging; Silicon; Surface charging; Virtual manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1985 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1985.190998
  • Filename
    1485548
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556552