Title :
A full three-dimensional simulation on alpha-particle induced DRAM soft-errors
Author :
Masuda, Hiroji ; Toyabe, Toru ; Shukuri, Hiroko ; Ohshima, Kazuyoshi ; Itoh, Kenji ; Itoh, Kiyoo
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
Numerical device, modeling is one of the most promising VLSI device design methods developed thus for in the sub-um era. This paper describes a full three-dimensional numerical modeling of alpha-particle-induced DRAM soft-error phenomena. The three-dimensional simulation results were verified using test chip measurement in Am
Keywords :
Charge carrier processes; Computational modeling; Costs; Integral equations; Noise measurement; Physics; Poisson equations; Random access memory; Silicon; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1985 International
DOI :
10.1109/IEDM.1985.191012
