Application of the Shubnikov-de Haas effect in characterization of sub-100-NM channel SI MOSFETs

A novel use of the Shubnikov-de Haas effect (SdH) in the characterization of channel length and gate capacitance of sub-100-nm channel Si MOSFETs is demonstrated. The SdH is used to measure the length of the "flat" part of the surface electrical potential along the channel, and also to directly measure gate capacitance. The characterization methods do not require knowledge of any device parameters,: one needs to know only the magnetic field, the number of oscillation peaks (for channel length charaterization) and the SdH oscillation period (for gate capacitance measurement). Both characterization methods can be generalized to the FETs fabricated in materials other than Si.