Title :
The effects of write/erase cycling on data loss in EEPROMs
Author :
Baglee, David A. ; Smayling, Michael C.
Author_Institution :
Texas Instruments, Houston, Texas
Abstract :
Increasing leakage at low electric fields is observed in thin silicon dioxide films after they have been subjected to write/erase cycling. This mechanism anneals out after high temperature baking. Conventional lifetesting techniques for EEPROMs may result in overly optimistic estimations of data retention.
Keywords :
Annealing; Capacitance-voltage characteristics; Capacitors; EPROM; Interface states; Life estimation; Nonvolatile memory; Plasma temperature; Silicon compounds; Testing;
Conference_Titel :
Electron Devices Meeting, 1985 International
DOI :
10.1109/IEDM.1985.191050
