DocumentCode
3556640
Title
High performance In0.15 Ga0.85 As/Al0.15 Ga0.85 As quantum well modulation doped FETs
Author
Masselink, W.T. ; Klem, J. ; Henderson, T. ; Ketterson, A. ; Gedymin, J.S. ; Morkoc, H. ; Gleason, K.R.
Author_Institution
University of Illinois at Urbana-Champaign, Urbana, IL
Volume
31
fYear
1985
fDate
1985
Firstpage
755
Lastpage
756
Keywords
Conducting materials; Epitaxial layers; FETs; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; Lattices; MESFETs; MODFET circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.191085
Filename
1485635
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