DocumentCode

3556643

Title

Extremely high transconductance (above 500 mS/mm) MOSFET with 2.5 nm gate oxide

Author

Horiguchi, S. ; Kobayashi, T. ; Miyake, M. ; Oda, M. ; Kiuchi, K.

Author_Institution

NTT Atsugi Electrical Communications Laboratories, Kanagawa, Japan

Volume

31

fYear

1985

fDate

1985

Firstpage

761

Lastpage

763

Keywords

Capacitance; Dry etching; Electrons; Frequency; Impurities; Laboratories; MOS devices; MOSFET circuits; Transconductance; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1985 International

Type

conf

DOI

10.1109/IEDM.1985.191088

Filename

1485638