Fabrication and properties of n-channel SiGe/Si modulation doped field-effect transistors grown by MBE

Author

Daembkes, H. ; Herzog, H.-J. ; Jorke, H. ; Kibble, H. ; Kasper, E.

Author_Institution

AEG Research Center Ulm, West Germany

Volume

fYear

1985

fDate

1985

Firstpage

768

Lastpage

770

Keywords

Buffer layers; Circuits; Doping; Epitaxial layers; FETs; Fabrication; Germanium silicon alloys; MESFETs; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1985 International

Type

DOI

10.1109/IEDM.1985.191091

Filename

1485641

Link To Document