DocumentCode :
3556701
Title :
Triple layered SOI dynamic memory
Author :
Ohtake, Koui ; Shirakawa, Kazuhiko ; Koba, Masayoshi ; Awane, Katsunobu ; Ohta, Yoshiji ; Azuma, Daisuke ; Miyata, Souichi
Author_Institution :
Central Research Laboratories, Sharp Corporation, Nara, Japan
Volume :
32
fYear :
1986
fDate :
1986
Firstpage :
148
Lastpage :
151
Abstract :
The vertically stacked layers of active devices are suitable for implementing various AI(Artificial Intelligence) systems. It is our novel proposal to utilize a number of recrystallized SOI (Silicon on Insulator) layers as dynamic memory planes adapted to the imager on-chip and it has been successfully realized as the linear cell memories with the triple layered CMOS structure. By introducing the interlayer routing and the interleaving control, the triple layered memory of a given chip size reveals its applicability to the image memory with a throughput two times higher and a storage capacity two times larger than those of the conventional one of the same size.
Keywords :
Capacitance; Capacitors; Fabrication; Hardware; Image storage; Interleaved codes; Laboratories; Logic arrays; Routing; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1986 International
Type :
conf
DOI :
10.1109/IEDM.1986.191135
Filename :
1486393
Link To Document :
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