• DocumentCode
    3556747
  • Title

    Excimer laser-based lithography for 0.5 µm device technology

  • Author

    Bennewitz, J.H. ; Escher, G.C. ; Feldman, M. ; Firtion, V.A. ; Jewell, T.E. ; Pol, V. ; Wilcomb, B.E. ; Clemens, J.T.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, New Jersey
  • fYear
    1986
  • fDate
    7-10 Dec. 1986
  • Firstpage
    312
  • Lastpage
    315
  • Abstract
    A deep ultraviolet step and repeat system, operating at 248.4 nm, has been developed by retrofitting a commercial system with a KrF excimer laser and custom designed fused silica condenser and projection optics. The 5X projection lens has a minimum field size of 14.5 mm and a variable numerical aperture of 0.20 to 0.38. Resolution of 0.5 µm features over the full field as obtained with routine use, and 0.35 µm resolution is attainable under more limited conditions. By reducing the numerical aperture, 0.8 µm resolution can be obtained over a 20 mm field with large depth of focus. This paper reports on recent system improvements and discusses the technical issues associated with short wavelength laser-based lithography.
  • Keywords
    Bandwidth; Laser beams; Lenses; Lighting; Lithography; Optical materials; Optical pulses; Optical scattering; Power lasers; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Conference_Location
    Los Angeles, CA, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191178
  • Filename
    1486436