DocumentCode
3556747
Title
Excimer laser-based lithography for 0.5 µm device technology
Author
Bennewitz, J.H. ; Escher, G.C. ; Feldman, M. ; Firtion, V.A. ; Jewell, T.E. ; Pol, V. ; Wilcomb, B.E. ; Clemens, J.T.
Author_Institution
AT&T Bell Laboratories, Murray Hill, New Jersey
fYear
1986
fDate
7-10 Dec. 1986
Firstpage
312
Lastpage
315
Abstract
A deep ultraviolet step and repeat system, operating at 248.4 nm, has been developed by retrofitting a commercial system with a KrF excimer laser and custom designed fused silica condenser and projection optics. The 5X projection lens has a minimum field size of 14.5 mm and a variable numerical aperture of 0.20 to 0.38. Resolution of 0.5 µm features over the full field as obtained with routine use, and 0.35 µm resolution is attainable under more limited conditions. By reducing the numerical aperture, 0.8 µm resolution can be obtained over a 20 mm field with large depth of focus. This paper reports on recent system improvements and discusses the technical issues associated with short wavelength laser-based lithography.
Keywords
Bandwidth; Laser beams; Lenses; Lighting; Lithography; Optical materials; Optical pulses; Optical scattering; Power lasers; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1986 International
Conference_Location
Los Angeles, CA, USA
Type
conf
DOI
10.1109/IEDM.1986.191178
Filename
1486436
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