DocumentCode
3556795
Title
Technology improvement for high speed ECL RAMs
Author
Ogiue, Katsumi ; Odaka, Masanori ; Iwabuchi, Masato ; Uchida, Akihisa
Author_Institution
Hitachi Ltd., Tokyo, Japan
Volume
32
fYear
1986
fDate
1986
Firstpage
468
Lastpage
471
Abstract
The trends in high speed ECL random access memories (RAMs) are reviewed with emphasis on memory cell improvements for achieving high speed performance. State-of-the-art technologies including bipolar, BICMOS, memory-with-logic modules and logic-in-memory LSIs are discussed. Finally, some prospects for ultra-high speed RAMs are proposed.
Keywords
BiCMOS integrated circuits; Capacitors; High performance computing; Large scale integration; Power dissipation; Production; Random access memory; Read-write memory; System performance; Technological innovation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1986 International
Type
conf
DOI
10.1109/IEDM.1986.191222
Filename
1486480
Link To Document