Title :
High density contactless, self aligned EPROM cell array technology
Author :
Esquivel, J. ; Mitchell, A. ; Paterson, J. ; Riemenschnieder, B. ; Tieglaar, H. ; Coffman, T. ; Dolby, D. ; Gill, H. ; Lahiry, R. ; Lin, S. ; McElroy, D. ; Schreck, J. ; Shah, P.
Author_Institution :
Texas Instruments (Dallas)
Abstract :
A revolutionary EPROM cell technology has been developed. Its suitability to realize high density memories with performance and reIiability comparable to the conventional EPROMS has been demonstrated with a 64K bit density vehicle. This self-aligned contactless cell is in a crosspoint array configuration, and occupies 33 percent less area than a conventional cell at comparable design rules. The planar, contactless technology has enhanced manufacturability, scalability and is ideally suited for memories beyond megabit density.
Keywords :
CMOS technology; Contacts; EPROM; Instruments; Manufacturing; Nonvolatile memory; PROM; Scalability; Surfaces; Vehicles;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191259
