DocumentCode
3556843
Title
A single-step MOCVD technology for AlGaAs BH lasers
Author
Sugino, T. ; Kawa, A. Yoshi ; Yamamoto, A. ; Hirose, M. ; Kano, G. ; Teramoto, I.
Author_Institution
Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
Volume
32
fYear
1986
fDate
1986
Firstpage
618
Lastpage
621
Abstract
A novel AlGaAs BH laser which is designated as "Ridge Buried Heterostructure (RBH) Laser" has been successfully fabricated by a single-step MOCVD technology. The principle of the fabrication technology is based on an anisotropic crystal growth on the undercut ridge substrate. The narrow stripe active region and burying layer are formed successively by the single-step MOCVD. The RBH laser exhibits CW lasing characteristics with a threshold current as low as 30 mA and an external differential quantum efficiency of 35 % per facet at room temperature.
Keywords
Anisotropic magnetoresistance; Laser modes; MOCVD; Optical design; Optical device fabrication; Quantum well lasers; Semiconductor lasers; Substrates; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1986 International
Type
conf
DOI
10.1109/IEDM.1986.191266
Filename
1486524
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