• DocumentCode
    3556850
  • Title

    Deep-trench power MOSFET with an Ron Area product of 160 m Ω .mm2

  • Author

    Ueda, D. ; Takagi, H. ; Kano, G.

  • Author_Institution
    Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
  • fYear
    1986
  • fDate
    7-10 Dec. 1986
  • Firstpage
    638
  • Lastpage
    641
  • Abstract
    In this paper, is demonstrated the power MOSFET having an Ron Area product of 160 mΩ.mm2(Ron=11 mΩ : BVdss=15 V, Chip area= 3.8 mm × 3.8 mm) which is approximately one third of the lowest value ever reported. A newly developed deep-trench structure has contributed to such the drastic reduction of the product.
  • Keywords
    Conductivity; Electrons; Laboratories; MOSFET circuits; Numerical simulation; Power MOSFET; Product design; Rectifiers; Relays; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Conference_Location
    Los Angeles, CA, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191272
  • Filename
    1486530
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556850