DocumentCode
3556874
Title
Investigation and reduction of hot electron induced punchthrough (HEIP) effect in submicron PMOSFETs
Author
Koyanagi, M. ; Lewis, A.G. ; Zhu, J. ; Martin, R.A. ; Huang, T.Y. ; Chen, J.Y.
Author_Institution
Xerox, Palo Alto Research Center, Palo Alto, CA
Volume
32
fYear
1986
fDate
1986
Firstpage
722
Lastpage
725
Abstract
Hot carrier reliability in submicron PMOSFETs has been investigated. The punchthrough voltage is seriously reduced due to Hot Electron Induced Punch-through (HEIP) in submicron PMOSFETs. In order to mitigate the HEIP effect, an LDD PMOSFET has been optimized by examining the channel electric field, substrate and gate currents, and the threshold voltage shifts due to hot electron injection. A device lifetime of more than 10 years has been obtained using LDD PMOSFETs with gate lengths of 0.8 µm at the worst case supply voltage (5.5v).
Keywords
CMOS technology; Degradation; Hot carriers; Impact ionization; Integrated circuit reliability; Laboratories; MOSFETs; Stress; Substrate hot electron injection; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1986 International
Type
conf
DOI
10.1109/IEDM.1986.191295
Filename
1486553
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