DocumentCode
3556985
Title
Power-optimized design of quantum well oscillators
Author
Kesan, V.P. ; Linton, T.D. ; Miller, D.R. ; Maziar, C.M. ; Neikirk, D.P. ; Blakey, P.A. ; Streetman, B.G.
Author_Institution
The University of Texas at Austin, Austin, Texas
Volume
33
fYear
1987
fDate
1987
Firstpage
62
Lastpage
65
Abstract
The use of quantum well devices for extremely high frequency oscillators has recently been proposed. Results up to 200 GHz have been reported, although the output powers have been extremely small. We present analyses of a new quantum well oscillator device, the quantum well injection transit time (QWITT) diode, which exploits transit time effects to improve rf performance of quantum well oscillators. The small and large signal analyses indicate that a QWITT diode may provide reasonable power levels at frequencies above 100 GHz.
Keywords
Diodes; Drives; Frequency; Microelectronics; Oscillators; Performance analysis; Power engineering computing; Power generation; Resonance; Resonant tunneling devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191349
Filename
1487307
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