Enhancement mode HgCdTe MISFETs and circuits for focal plane applications

Long wavelength enhancement mode HgCdTe MISFETs are characterized at 77K, and the first integrated circuits using these devices demonstrated. Accurate models are demonstrated for MISFET current-voltage characteristics and small signal behaviour. MISFET breakdown is characterized as a function of channel length. Noise measurements on HgCdTe MISFETs and circuits show 1/f behaviour to at least 100 kHz, and a noise level suitable for focal plane applications. Other characteristics of HgCdTe circuits are studied, demonstrating performance adequate for focal plane applications.