A self-consistent particle simulation for (AlGa) As/GaAs HBTs with improved base-collector structures

A one-dimensional self-consistent particle simulator was developed for (AlGa)As/GaAs heterojunction bipolar transistors (HBTs) to investigate how far the device performance can be improved by positively utilizing non-equilibrium electron transport phenomena under a heavily doped base condition. Computation was thus carried out for HBTs with various categories of base and collector structures. The electron transport mechanisms are discussed in detail according to the results in conjunction with the reduction in base-to-collector transit time.