DocumentCode
3557043
Title
SUPREM 3.5, process modeling of gallium arsenide
Author
Deal, M.D. ; Hansen, S.E. ; Anholt, R. ; Chou, S. ; Plummer, J.D. ; Dutton, R.W. ; Sigmon, T.W. ; Stevenson, D.A. ; Helms, C.R. ; Bravman, J.C.
Author_Institution
Stanford University, Stanford, California
Volume
33
fYear
1987
fDate
1987
Firstpage
256
Lastpage
259
Abstract
A computer program has been developed to simulate processes used to manufacture digital GaAs integrated circuits. The processes modeled in this first version of the simulator include ion implantation, diffusion, and activation, and the simulator includes a routine to calculate threshold voltage for a MESFET or JFET based on the simulated processing results and on substrate properties. Parameters for the models were derived from an extensive number of implantation and diffusion experiments, the major results of which are presented in this paper.
Keywords
Circuit simulation; Computational modeling; Computer aided manufacturing; Computer integrated manufacturing; Computer simulation; Digital integrated circuits; Gallium arsenide; Integrated circuit manufacture; Manufacturing processes; Virtual manufacturing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191403
Filename
1487361
Link To Document