Process models for ultra-shallow junction technologies

Submicron technologies include low thermal budget processing, Ge⁺or Si⁺preamorphization implants, ultra-low energy B and As implants, thin oxides and silicide contacts. These new technologies and the models required to simulate them are not simple extrapolations of existing process models. Major new process variables include crystal damage produced during implantation and the annealing of this damage, point-defect injection during contacting and implantation parameters associated with preamorphization. In this paper we describe new process models that describe these effects. The models are based on extensive data generated as part of our shallow junction, submicron CMOS program, and the models have been imbedded in the PREDICT^TMprocess simulation code.