DocumentCode
3557068
Title
Parasitic leakage in DRAM trench storage capacitor vertical gated diodes
Author
Noble, W.P. ; Bryant, A. ; Voldman, S.H.
Author_Institution
IBM General Technology Division, Essex Junction, Vermont
Volume
33
fYear
1987
fDate
1987
Firstpage
340
Lastpage
343
Abstract
Extensive characterization and mechanism modeling have been done on a newly observed parasitic voltage dependent junction leakage current which is inherent in the gated diodes of DRAM trench storage nodes. Excellentagreement is shown between model and data. Comparison of the observed voltage and temperature dependence to the model indicates that, in the normal range of operation, this current is limited by the diffusion of thermally generated carriers along the gated node surface. The design and reliability implications are discussed.
Keywords
Capacitors; Dielectric substrates; Diodes; Electrodes; Insulation; Leakage current; Random access memory; Temperature dependence; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191426
Filename
1487384
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