Application of ion-implantation method to amorphous silicon thin-film-transistors

Hot ion-implantation technique has been applied, for the first time, to undoped microcrystalline silicon deposited by plasma decomposition of silane. Conductivity of more than 1S/cm has been obtained for films implanted with either phosphorus or boron ions at a dosage of 3×10¹⁵cm^-2when substrate temperature during implantation is kept at 300°C. This method has been applied to prepare highly conductive source and drain regions in hydrogenated amorphous silicon thin-film transistors. Transistor characteristics are also presented.