Title :
CMOS SRAM alpha particle modelling and experimental results
Author :
Voldman, S. ; Corson, P. ; Patrick, L. ; Nguyen, K. ; Gilbert, L. ; Goodwin, R. ; Maffit, T. ; Murphy, S.
Author_Institution :
IBM General Technology Division, Essex Junction, Vermont
Abstract :
Through the use of device simulation, circuit analysis and experimentation, the alpha particle sensitivities of state-of-the-art CMOS SRAMs have been quantified. Alpha particle immunity exists in these CMOS SRAMs from 64-kb to 1-Mb SRAMs and soft fails can only be produced by significant reduction of the power supply voltage.
Keywords :
Alpha particles; Analytical models; CMOS technology; Circuit analysis; Circuit simulation; Monte Carlo methods; Random access memory; Semiconductor device modeling; Substrates; Voltage;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191474
