DocumentCode :
3557133
Title :
Ultra-thin re-oxidized nitrided-oxides prepared by rapid thermal processing
Author :
Hori, Takashi ; Iwasaki, Hiroshi
Author_Institution :
Matsushita Electric Industrial Co., Ltd., Osaka, Japan
Volume :
33
fYear :
1987
fDate :
1987
Firstpage :
570
Lastpage :
573
Abstract :
We applied, for the first time, rapid thermal processing to the full fabrication process of ultrathin reoxidized nitrided-oxides. 8-nm-thick oxides nitrided at 950 and 1150°C for 60 s were re-oxidized in O2at 900- 1150°C for 15-200 s. We studied how nitridation and reoxidation conditions affect the electrical characteristics of the dielectrics, especially, the charge-trapping properties: charge-to-breakdown QBD, flatband voltage shift ΔVFB, and increase of midgap interface state density ΔDit_munder high-field stress. Both ΔVFBand ΔDit_mreduce as re-oxidation proceeds in the present experimental conditions. Rapid re-oxidation, in a precisely controlled manner, achieves striking improvement of dielectric integrity: the QBDis increased by about 16 times and both the ΔVFBand ΔDit_mare reduced by more than 2 orders of magnitude compared with those of oxides, while maintaining the low initial VFBand Dit_mcomparable to those of oxides.
Keywords :
Capacitance-voltage characteristics; Design for quality; Dielectrics; Electrons; Fabrication; Interface states; Rapid thermal annealing; Rapid thermal processing; Thermal resistance; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1987 International
Type :
conf
DOI :
10.1109/IEDM.1987.191490
Filename :
1487448
Link To Document :
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