DC and microwave performance of Indium-based heterojunction field-effect transistor fabricated on Si-InP

This paper reports the fabrication and microwave performance of MODFETs (InGaAs/InAlAs) and two types of heterojunction MESFETs (undoped InAlAs/n-InGaAs or n-InP). Gains of 12.5 dB at 26 GHz were measured for 1.3 µm gate length MODFETs, which extrapolates ta a fmaxof over 100 GHz. Maximum available gains of about 15.5 dB for the InGaAs and 11 dB for InP channel MESFETs were measured at 10 GHz. These devices outperformed similar devices previously reported in the literature.