DocumentCode :
3557225
Title :
Ultra-high speed AlInAs-GaInAs HEMT technology
Author :
Mishra, U.K. ; Jensen, J.F. ; Brown, A.S. ; Beaubien, R.S. ; Jelloian, L.M.
Author_Institution :
Hughes Research Laboratories, Malibu, California
Volume :
33
fYear :
1987
fDate :
1987
Firstpage :
879
Lastpage :
880
Keywords :
Delay; Electron mobility; Epitaxial layers; FETs; HEMTs; Logic devices; Ring oscillators; Substrates; Temperature measurement; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1987 International
Type :
conf
DOI :
10.1109/IEDM.1987.191580
Filename :
1487538
Link To Document :
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