Title :
High performance superjunction UMOSFETs with split p-columns fabricated by multi-ion-implantations
Author :
Miura, Yoshinao ; Ninomiya, Hitoshi ; Kobayashi, Kenya
Author_Institution :
Div. of Power Manage. Devices, NEC Electron. Corp., Kawasaki, Japan
Abstract :
We propose superjunction UMOSFET devices (SJ-UMOS) with split p-column structures for automotive applications with rated voltage of 40-75 V. The split p-column fabricated by multi-ion-implantations consists of p-type islands separated by small distances in an n-type epi-layer. This structure was designed to improve the repetitive inductive switching performance without sacrificing the original benefits of the SJ structure. We achieved a specific on-resistance of 28.7 mΩmm2 at a gate voltage of 10 V for breakdown voltage of 68.0 V. In addition, we confirmed high immunity against inductive switching stress at 175°C and good reverse recovery properties.
Keywords :
automotive engineering; ion implantation; p-n junctions; power MOSFET; semiconductor process modelling; 10 V; 175 C; 40 to 75 V; 68 V; SJ-UMOS; automotive applications; automotive engineering; high performance superjunction UMOSFET; multi ion implantations; n-type epi-layer; p-n junctions; p-type islands; power MOSFET; repetitive inductive switching; split p-column structures; superjunction UMOSFET devices; Automotive applications; Breakdown voltage; Doping profiles; Energy management; Low voltage; MOSFET circuits; National electric code; Power MOSFET; Shape; Stress;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1487945
