Title :
600V SOI gate drive HVIC for medium power applications operating up to 200°C
Author :
Pawel, S. ; Roßberg, M. ; Herzer, R.
Author_Institution :
TU Ilmenau, Germany
Abstract :
The design, functionality and measurements of a fully integrated 600V SOI gate drive IC are presented. The seven-channel HVIC is aimed at three-phase systems for low power and medium power applications. Dielectric device isolation and detailed circuit design ensure operation up to a temperature of 200°C. Robust signal processing has been given highest attention at all design stages. A dedicated signal reconstruction topology is presented to provide maximum immunity against parasitic coupling from the power plane. The measurements confirming the safe operation of the IC are given.
Keywords :
integrated circuit design; power integrated circuits; signal reconstruction; silicon-on-insulator; 200 C; 600 V; SOI gate drive HVIC; dielectric device isolation; integrated circuit design; low power applications; medium power applications; power integrated circuits; seven-channel HVIC; signal processing; signal reconstruction topology; silicon-on-insulator; three-phase systems; Circuit synthesis; Circuit topology; Dielectric devices; Dielectric measurements; Integrated circuit measurements; Robustness; Signal design; Signal processing; Signal reconstruction; Temperature;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1487949
