Cryogenic and high temperature performance of 4H-SiC vertical junction field effect transistors (VJFETs) for space applications

Author

Cheng, L. ; Sankin, I. ; Merrett, J.N. ; Bondarenko, V. ; Kelley, R. ; Purohit, S. ; Koshka, Y. ; Casady, J.R.B. ; Casady, J.B. ; Mazzola, M.S.

Author_Institution

Semisouth Labs. Inc., Starkville, MS, USA

fYear

2005

fDate

23-26 May 2005

Firstpage

231

Lastpage

234

Abstract

In this paper, we present an investigation on the different aspects of the performance of a 600V, 3A 4H-SiC vertical-trench junction field effect transistor (VJFET) at cryogenic and high temperatures. Some critical device physics related factors that affect the DC characteristics and switching performance of the device are explored. In particular, the experimental low-temperature performance of 4H-SiC VJFETs (down to 30K or -243°C) is presented for the first time to our knowledge.

Keywords

cryogenic electronics; high-temperature electronics; junction gate field effect transistors; 3 A; 600 V; DC characteristics; SiC; VJFET; device physics; high temperature performance; low-temperature performance; switching performance; vertical junction field effect transistors; Cryogenics; Electron mobility; FETs; Nitrogen; Power system reliability; Silicon carbide; Substrates; Temperature; Thermal conductivity; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on

Print_ISBN

0-7803-8890-9

Type

conf

DOI

10.1109/ISPSD.2005.1487993

Filename

1487993