DocumentCode
3557443
Title
Impact of fine surface chemical-mechanical polishing on the manufacturing yield of 1200V SiC Schottky barrier diodes
Author
Tournier, D. ; Perez-Tomás, A. ; Godignon, P. ; Millán, J. ; Mank, H. ; Turover, D. ; Hinchley, D. ; Rhodes, J.
Author_Institution
Centro Nacional de Microelectron., CNM-CSIC, Barcelona, Spain
fYear
2005
fDate
23-26 May 2005
Firstpage
239
Lastpage
242
Abstract
Unlike other techniques for surface cleaning/etching such as dry etching (RIE, ICP), the new polishing process does not degrade Schottky diode forward characteristics. Thus, apart from the promising improvement of starting material quality, fine surface polishing seems to offer significant advantages in terms of increasing manufacturing yield.
Keywords
Schottky diodes; chemical mechanical polishing; silicon compounds; sputter etching; 1200 V; ICP; RIE; Schottky barrier diodes; SiC; chemical-mechanical polishing; dry etching; fine surface polishing; material quality; surface cleaning; Annealing; Chemicals; Contacts; Degradation; Electric variables; Manufacturing; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN
0-7803-8890-9
Type
conf
DOI
10.1109/ISPSD.2005.1487995
Filename
1487995
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