Title :
Trench IGBT behaviour near to latch-up conditions
Author :
Müller, Andreas ; Pfirsch, Frank ; Silber, Dieter
Author_Institution :
Bremen Univ.
Abstract :
Trench IGBTs show very high stability against latching with appropriate layout of the p-body/trench distance. This is in accordance with the simulation results. Simulation of parallel devices resulted in unexpected alternating high current states indicating the possibility of moving filaments as has been reported from dynamic avalanche investigations
Keywords :
insulated gate bipolar transistors; semiconductor device breakdown; semiconductor device models; IGBT stability; insulated gate bipolar transistors; latch-up conditions; parallel devices; trench IGBT behaviour; Appropriate technology; Circuit simulation; Current density; Electron mobility; Impact ionization; Insulated gate bipolar transistors; Performance loss; Space charge; Stability; Switching loss;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1487999
