DocumentCode :
3557457
Title :
Ultra-low Von and High Voltage 4H-SiC Heterojunction Diode
Author :
Tanaka, H. ; Hayashi, T. ; Shimoida, Y. ; Yamagami, S. ; Tanimoto, S. ; Hoshi, M.
fYear :
2005
fDate :
23-26 May 2005
Firstpage :
287
Lastpage :
290
Keywords :
Epitaxial layers; Heterojunctions; Physics; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Temperature distribution; Temperature measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
Type :
conf
DOI :
10.1109/ISPSD.2005.1488007
Filename :
1488007
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3557457
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