Title :
Integrated Bi-directional Trench Lateral Power MOSFETs for One Chip Lithium-ion Battery Protection ICs
Author :
Lu, D.H. ; Fujishima, N. ; Sugi, A. ; Sugimoto, M. ; Matsunaga, S. ; Sawada, M. ; Iwaya, M. ; Takagiwa, K.
Author_Institution :
Device Technol. Lab., Fuji Electr. Adv. Technol. Co., Nagano
Abstract :
A low specific on-resistance bi-directional trench lateral power MOSFET (BTLPM) has been integrated with a controller in a 0.6mum BiCDMOS process for single-cell lithium-ion battery protector, downsizing the footprint of the protector in chip-scale package to 3mm 2, one-third of its multi-chip counterparts. The first-silicon results of the BTLPM switches demonstrated a breakdown voltage of 22V, a specific on-resistance of 6.8mOmegamm2 at a gate voltage of 4V (a gate electrical field of 2.3MV/cm)
Keywords :
BiCMOS integrated circuits; power MOSFET; power integrated circuits; protection; secondary cells; semiconductor device breakdown; 0.6 micron; 22 V; 4 V; BTLPM switches; BiCDMOS process; BiCMOS integrated circuits; chip-scale package; controller IC; integrated bi-directional trench lateral power MOSFET; one chip lithium-ion battery protection IC; power integrated circuits; secondary cells; semiconductor device breakdown; single-cell lithium-ion battery protector; Batteries; Bidirectional control; Chip scale packaging; Etching; MOSFETs; Mobile handsets; Protection; Switches; Voltage; Wire;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1488024
