Title :
New semiconductor glucose sensor using sputtered LaF/sub 3/ film
Author :
Katsube, T. ; Shimizu, M. ; Hara, M. ; Matayoshi, N. ; Miura, N. ; Yamazoe, N.
Author_Institution :
Fac. of Eng., Saitama Univ., Japan
Abstract :
A sputtered LaF/sub 3/ (solid electrolyte) film was used to construct a novel MOS=type glucose sensor. The sensor, having a structure of GOD (glucose oxidase) immobilized film/Pt/LaF/sub 3//SiO/sub 2//Si/Al multiple layers, needs no external reference electrode. A stable response was obtained in the glucose concentration range from 2*10/sup -4/ to 2*10/sup -2/ M in a phosphate buffer solution of pH 6.9, with a 90% response time of ca. 1 min. Preliminary discussions on the response mechanism are also presented.<>
Keywords :
biosensors; electric sensing devices; insulated gate field effect transistors; lanthanum compounds; sputtered coatings; C-V characteristics; H/sub 2/O/sub 2/; MOS; Pt-LaF/sub 3/-SiO/sub 2/-Si-Al; glucose oxidase; phosphate buffer; response; semiconductor glucose sensor; solid electrolyte film; sputtered film; Capacitance-voltage characteristics; Capacitive sensors; Electrodes; Magnetic sensors; Radio frequency; Semiconductor films; Sensor phenomena and characterization; Sputtering; Sugar; Temperature sensors;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.148803
