Quantum dot intermediate band solar cell material systems with negligible valence band offsets

Author

Levy, Michael Y. ; Honsberg, Christtiana ; Martí, Antonio ; Luque, Antonio

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2005

fDate

3-7 Jan. 2005

Firstpage

90

Lastpage

93

Abstract

In this paper, material triads (quantum-dot/barrier/substrate) are presented that may implement quantum dot intermediate band solar cells with conversion efficiencies greater than 60%. Triads whose barrier material and substrate material are lattice-matched are presented. In addition, triads are presented with the lattice constant of the substrate in-between the lattice constant of the barrier and the lattice constant of the quantum dot. The latter case provides triads that may remove strain during epitaxial growth.

Keywords

lattice constants; semiconductor quantum dots; solar cells; valence bands; conversion efficiency; epitaxial growth; lattice constant; lattice matching; negligible valence band offset; quantum dot intermediate band solar cell material systems; quantum-dot/barrier/substrate triads; strain removal; Charge carrier processes; Conducting materials; Lattices; Photonic band gap; Photovoltaic cells; Quantum computing; Quantum dots; Stationary state; Substrates; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE

ISSN

0160-8371

Print_ISBN

0-7803-8707-4

Type

conf

DOI

10.1109/PVSC.2005.1488076

Filename

1488076