• DocumentCode
    3557549
  • Title

    A simple, high performance piezoresistive accelerometer

  • Author

    Suminto, J.T.

  • Author_Institution
    Allied Signal Aerosp. Co., Sunnyvale, CA, USA
  • fYear
    1991
  • fDate
    24-27 June 1991
  • Firstpage
    104
  • Lastpage
    107
  • Abstract
    The author describes the structure, manufacture, and performance of a 1000 g full-scale piezoresistive accelerometer. This accelerometer has a very high resonant frequency, nominally 65 kHz, and is designed to have a sensitivity of 0.2 mV/g. The design is executed in (110) silicon. The piezoresistors and inertial system are formed in one etching step. The piezoresistors are suspended between the inertial mass and support rim, and are very small in volume, 7.8*10/sup -10/ cm/sup 3/, thus needing very small strain energy.<>
  • Keywords
    accelerometers; elemental semiconductors; etching; piezoelectric transducers; semiconductor technology; silicon; 65 kHz; Si; etching; inertial system; manufacture; piezoresistive accelerometer; structure; Accelerometers; Electric shock; Etching; Fasteners; Piezoresistance; Piezoresistive devices; Protection; Pulp manufacturing; Resonant frequency; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-87942-585-7
  • Type

    conf

  • DOI
    10.1109/SENSOR.1991.148811
  • Filename
    148811