• DocumentCode
    3557555
  • Title

    Unusual capacitance emission transients in CIGS caused by large defect entropy changes

  • Author

    Young, David L. ; Ramanathan, Kannan ; Crandall, Richard S.

  • Author_Institution
    Nat. Renewable Energy Lab., Golden, CO, USA
  • fYear
    2005
  • fDate
    3-7 Jan. 2005
  • Firstpage
    259
  • Lastpage
    262
  • Abstract
    Capacitance transient data from bias-pulse experiments on CdS/CIGS solar cells show an unusual behavior at high temperatures. Above 350 K a minority carrier trap, with a larger activation energy than a majority carrier trap, emits faster than the lower activation-energy minority trap. A simple enthalpy model for trap emission cannot explain this counterintuitive behavior, but the more complete Gibbs free energy model that includes entropy can explain it. We show that entropy plays a major role in carrier emission from traps in CIGS.
  • Keywords
    II-VI semiconductors; cadmium compounds; capacitance; copper compounds; electron emission; electron traps; enthalpy; entropy; free energy; gallium compounds; hole traps; indium compounds; solar cells; ternary semiconductors; thin film devices; wide band gap semiconductors; CdS-Cu(InGa)Se2; CdS/CIGS solar cells; Gibbs free energy model; activation energy; bias-pulse experiments; capacitance emission transient; defect entropy changes; enthalpy model; majority carrier trap; minority carrier trap; trap emission; Capacitance; Electron traps; Energy barrier; Energy measurement; Entropy; Laboratories; Photovoltaic cells; Renewable energy resources; Temperature; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-8707-4
  • Type

    conf

  • DOI
    10.1109/PVSC.2005.1488118
  • Filename
    1488118