• DocumentCode
    3557571
  • Title

    Transient degradation and recovery of CdS/CdTe solar cells

  • Author

    Hegedus, Steven ; Desai, Darshini ; Ryan, Dan ; McCandless, Brian

  • Author_Institution
    Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
  • fYear
    2005
  • fDate
    3-7 Jan. 2005
  • Firstpage
    319
  • Lastpage
    322
  • Abstract
    Changing the bias voltage, light intensity and temperature during stress can induce transient degradation or recovery in VOC of CdTe solar cells. Simulated day/night cycles leads to daily degradation in the light and recovery in the dark. Greater recovery in the dark and less bias dependence is correlated with better overall stability. These transients complicate the correlation between cell (indoor) and module (outdoor) performance. Results are consistent with changes in electronic states and recombination. No single stress protocol is likely to identify all instability mechanisms.
  • Keywords
    II-VI semiconductors; cadmium compounds; electron-hole recombination; life testing; radiation effects; recovery; solar cells; stress effects; wide band gap semiconductors; CdS-CdTe; bias voltage change; cell performance; electronic recombination; electronic states; indoor performance; instability mechanism; light intensity; module performance; outdoor performance; simulated day/night cycles; single stress protocol; transient CdS/CdTe solar cell degradation; transient CdS/CdTe solar cell recovery; Degradation; Energy conversion; IEC; Life testing; Photovoltaic cells; Spontaneous emission; Stability; Stress measurement; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-8707-4
  • Type

    conf

  • DOI
    10.1109/PVSC.2005.1488133
  • Filename
    1488133