DocumentCode
3557589
Title
Preparation and properties of CIGS and CIGSS thin films using DESe as a selenium source and H2S as sulfur source
Author
Jahagirdar, Anant H. ; Dhere, Neelkanth G. ; Kulkarni, Sachin S. ; Kadam, Ankur A. ; Shirolika, Jyoti S. ; Moutinho, Helio ; To, Bobby
Author_Institution
Florida Solar Energy Center, Cocoa, FL, USA
fYear
2005
fDate
3-7 Jan. 2005
Firstpage
414
Lastpage
417
Abstract
Cu(In1-xGax)(Se1-ySy)2 (CIGSS) thin films were prepared at the FSEC photovoltaic materials lab in two steps. The first step consisted of deposition of CuGa-In precursors using DC magnetron sputtering on molybdenum back contact. The second step involved selenization/sulfurization of these precursors. Selenization was carried out using diethylselenide (DESe) as a selenium source and H2S as sulfur source. CIGSS thin-film solar cells were completed by depositing n-type CdS layer by chemical bath deposition (CBD), ZnO/ZnO:Al window bilayer by RF magnetron sputtering and Ni-AI front contacts by e-beam evaporation. This paper describes the new DESe set-up developed at FSEC PV Materials Lab and preparation and properties of CuIn1-xGaxSe2 (CIGS) and CIGSS thin films.
Keywords
copper compounds; electron beam deposition; gallium compounds; indium compounds; liquid phase deposition; semiconductor thin films; solar cells; sputter deposition; ternary semiconductors; thin film devices; vacuum deposition; CIGS thin films; CIGSS thin films; CIGSS thin-film solar cells; CuGa-In deposition; CuIn1-xGaxSe2; DC magnetron sputtering; DESe; H2S; Mo-Cu(In1-xGax)(Se1-ySy)2-CdS-ZnO:Al-NiAl; RF magnetron sputtering; chemical bath deposition; diethylselenide; e-beam evaporation; front contacts; molybdenum back contact; n-type CdS layer deposition; photovoltaic materials lab; precursor selenization; precursor sulfurization; selenium source; sulfur source; thin film preparation; thin film properties; window bilayer; Costs; Magnetic materials; Photovoltaic cells; Photovoltaic systems; Renewable energy resources; Solar energy; Solar power generation; Sputtering; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN
0160-8371
Print_ISBN
0-7803-8707-4
Type
conf
DOI
10.1109/PVSC.2005.1488157
Filename
1488157
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