Title :
Control of hydrogen for the improvement of optical properties of Ga(In)NAs epilayers grown on GaAs
Author :
Fotkatzikis, Aristotelis ; Pinault, Marie Amandine ; Coaquira, Jose Antonio ; Zhu, Wenkai ; Lytvynchuk, Alexander ; Freundlich, Alex
Author_Institution :
Houston Univ., TX, USA
Abstract :
In this work we have undertaken a systematic study of the influence of growth parameters and post growth rapid thermal annealing upon the optimization of optical properties of InGaAsN lattice matched and GaAsN metamorphic epilayers with room temperature bandgaps ranging from 1-1.3 eV. Epilayers were grown by chemical beam epitaxy on [001] GaAs substrates using a radio-frequency (RF) plasma source. A special emphasis is given to decipher the role of atomic hydrogen (generated during the growth process) upon structural properties and optical quality of Ga(In)NAs epilayers. Finally the optimization of H*/N* ratio yielded high quality quantum well material as attested by the unusually strong IR photoresponse of GaAsN/GaAs QW solar cells.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; energy gap; gallium arsenide; gallium compounds; hydrogen neutral atoms; indium compounds; infrared spectra; quantum well devices; rapid thermal annealing; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; solar cells; Ga(In)NAs epilayer growth; Ga(In)NAs-GaAs; GaAs; GaAs substrates; GaAsN metamorphic epilayers; GaAsN/GaAs QW solar cells; H; IR photoresponse; InGaAsN lattice matched epilayers; RF plasma source; atomic hydrogen; chemical beam epitaxy; growth parameters; hydrogen control; optical properties; optical properties optimization; optical quality; post growth rapid thermal annealing; quantum well material; radio-frequency plasma source; room temperature bandgaps; structural properties; Atom optics; Gallium arsenide; Hydrogen; Lattices; Optical control; Photonic band gap; Plasma temperature; Radio frequency; Rapid thermal annealing; Temperature distribution;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488224
