I-V characteristics of metal-organic film-silicon structure

Electrical characteristics of the Metal-Organic Film-Semiconductor structures have been investigated. As the top metal electrode Ag was used. As the organic film PTCDA (perylenetetracarboxylic dianhydride) was chosen. The semiconductor was p-type Si. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics in a wide temperature range from 150 K to 300 K were measured. The frequency dependence of the capacitance and transient capacitance measurements-were performed as well. The results show that I-V characteristics are non-linear with the “power” law current dependence under the forward bias and saturation-like behaviour under reverse bias. The activation energy of the reverse current is close to the activation energy of traps