Title :
Prospects for ion bombardment and ion implantation in GaAs and InP device fabrication
Author :
Morgan, D.V. ; Eisen, F.H. ; Ezis, A.
Author_Institution :
University of Leeds, Department of Electrical & Electronic Engineering, Leeds, UK
fDate :
8/1/1981 12:00:00 AM
Abstract :
In the review the processes of ion implantation and ion damage in GaAs and InP are considered. A survey of the basic physics of the implantation/damage processes is outlined together with detailed studies on the annealing required to activate the ions for semiconductor doping. The prospects and current achievements of this technological process in device fabrication are discussed in detail.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; ion implantation; reviews; GaAs; III-V semiconductors; InP; annealing; implantation/damage processes; ion bombardment; ion implantation; reviews; semiconductor doping; surface passivation;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
8/1/1981 12:00:00 AM
DOI :
10.1049/ip-i-1.1981.0033
