Title :
Monte Carlo particle modelling of local heating in n-type GaAs FET
Author_Institution :
University of Reading, Department of Computer Science, Reading, UK
fDate :
8/1/1981 12:00:00 AM
Abstract :
By accounting for phonons absorbed and emitted by the charge carriers as they are being scattered by the lattice, it has been possible to map the locations of heat development in an n-type GaAs field-effect transistor. The pattern of heat development differs somewhat from the predictions of simple theory (JE), and, in some areas, heat is removed by the carriers.
Keywords :
III-V semiconductors; Monte Carlo methods; field effect transistors; gallium arsenide; semiconductor device models; III-V semiconductor; Monte Carlo particle modelling; charge carriers; local heating; n-type GaAs FET; phonons;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
8/1/1981 12:00:00 AM
DOI :
10.1049/ip-i-1.1981.0034
