Electron - beam annealing of B-, P-, As-, Sb-, and Ga-implanted silicon by multiple-scan method

Data are presented on the sheet resistance of ion-implanted silicon following isothermal electron-beam annealing by the multiple-scan method. Anneals were performed on implanted 5 mm square chips for times around 5 s, with anneal temperatures up to 1350°C. Implants of As, P, B, Sb and Ga were annealed, ranging in doses from 1013 cm¿2 to 1016 cm¿2 in both (100) and (111) orientation silicon, and the sheet resistance was measured with a four-point probe. The measurements are presented as a plot of sheet resistance against electron-beam power, for a given dopant and anneal time, and the corresponding temperatures are also shown. Above a threshold temperature region of 750°C to 950°C near-full electrical activation is obtained, except in cases where the doping level approaches the solid solubility limit, or for certain high-dose boron implants. Slightly lower sheet resistances are obtained for implants in (100) material than (111) material, and at temperatures exceeding 1100°C diffusion effects are expected to be significant. The activation of ion implants without significant redistribution of dopant during annealing can be used to improve the performance of ion-implanted devices.