DocumentCode
3558263
Title
Comparison of MOS processes for VLSI
Author
Oldham, H.E. ; Partridge, S.L.
Author_Institution
GEC, Research Laboratories, Hirst Research Centre, Wembley, UK
Volume
130
Issue
3
fYear
1983
fDate
6/1/1983 12:00:00 AM
Firstpage
94
Abstract
A comparison of semiconductor technologies for VLSI is presented with particular reference to the limitations imposed by fundamental, technological and circuit-design considerations. Unichannel MOS and CMOS on single-crystal silicon or insulating substrates are the primary subjects for discussion.
Keywords
field effect integrated circuits; integrated circuit technology; large scale integration; reviews; CMOS; IC technology; MOS processes; VLSI; insulating substrates; semiconductor technologies; single crystal Si substrates; unichannel MOS;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
6/1/1983 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1983.0022
Filename
4642691
Link To Document