DocumentCode
3558650
Title
Electrophotographic patterning of thin-film silicon on glass foil
Author
Gleskova, H. ; Wagner, S. ; Shen, D.S.
Author_Institution
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Volume
16
Issue
10
fYear
1995
Firstpage
418
Lastpage
420
Abstract
We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on /spl sim/50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.
Keywords
amorphous semiconductors; electrophotography; elemental semiconductors; etching; foils; glass; semiconductor technology; semiconductor thin films; silicon; Cr; Si:H; a-Si:H; amorphous silicon; electrophotographic patterning; etch mask; glass foil; glass substrates; large-area thin-film circuits; lift-off; roll-to-roll patterning; thin films; toner; xerographic copier; Amorphous silicon; Etching; Glass; Inorganic materials; Printers; Printing; Semiconductor thin films; Substrates; Thin film circuits; Thin film devices;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.464803
Filename
464803
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