Title :
Pulsed Bias Voltage Shutdown to Suppress the Polarization Effect for a CdTe Radiation Detector
Author :
Seino, Tomoyuki ; Kominami, Shinya ; Ueno, Yuichiro ; Amemiya, Kensuke
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Kokubunji
Abstract :
Pulsed bias shutdown operation, in which the bias voltage supply is periodically shut down for a certain time, is suitable for suppressing the polarization effect in a CdTe radiation detector. The duration of the bias voltage shutdown should be short to decrease the dead time and ensure the continuity of the measurement; however, the polarization effect may not be suppressed if the duration is too short. Therefore, we investigated bias voltage shutdown durations and intervals that stabilize the detector performance. A stacked type detector consisting of four 1-mm-thick CdTe diodes was used. At 35degC, the energy resolution for the 511 keV photopeak of the 22 Na source saturates at around 30 min after the measurement start and then does not change up to 300 min when the bias voltage is shut down for 10 ms every 5 min. Similarly at 60degC, the energy resolution for the 511 keV photopeak is unchanged for 300 min when the bias voltage is shut down for 10 ms every 10 s.
Keywords :
II-VI semiconductors; gamma-ray detection; nuclear electronics; polarisation; semiconductor counters; semiconductor diodes; 22 Na source; CdTe radiation detector; dead time; electron volt energy 511 keV; energy resolution; gamma-rays detection; nuclear electronics; photopeak; polarization effect; pulsed bias voltage shutdown; semiconductor diodes; size 1 mm; stacked type detector; temperature 35 C; temperature 60 C; time 10 ms; time 10 s; time 300 min; Energy measurement; Energy resolution; Polarization; Positron emission tomography; Radiation detectors; Semiconductor diodes; Semiconductor radiation detectors; Temperature; Time measurement; Voltage; Energy resolution; polarization effect; pulsed bias voltage; semiconductor radiation detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2002079