DocumentCode
3559256
Title
Dielectric Charging in Electrostatically Actuated MEMS Ohmic Switches
Author
Peng, Zhen ; Palego, Cristiano ; Halder, Subrata ; Hwang, James C M ; Jahnes, Christopher V. ; Etzold, K.F. ; Cotte, John M. ; Magerlein, John H.
Author_Institution
Lehigh Univ., Bethlehem, PA
Volume
8
Issue
4
fYear
2008
Firstpage
642
Lastpage
646
Abstract
MEMS switches having separate signal and actuation electrodes with different air gaps are fabricated using a copper-based CMOS interconnect manufacturing process. By using a control voltage high enough to establish metal-metal contact between the signal electrodes while avoiding contact between the dielectric-covered actuation electrodes, dielectric charging appears to be tolerable. By simultaneously measuring the conductance across the signal electrodes and the capacitance across the actuation electrodes, the conductance-force characteristic can be readily monitored and analyzed. For the present switches, the effect of polarization charge appears to be negligible, and dielectric charging is significant only after dielectric contact is made and space charge is injected.
Keywords
electrical conductivity; electrostatic actuators; microswitches; ohmic contacts; CMOS interconnect; MEMS ohmic switches; air gaps; capacitance; conductance; dielectric charging; electrostatic actuator; metal-metal contact; polarization charge; space charge; Air gaps; CMOS process; Dielectrics; Electrodes; Manufacturing processes; Micromechanical devices; Microswitches; Signal processing; Switches; Voltage control; Contact resistance; MEMS; dielectric films; microelectromechanical devices; microwave switches;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2008.2002539
Filename
4700834
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