• DocumentCode
    3559256
  • Title

    Dielectric Charging in Electrostatically Actuated MEMS Ohmic Switches

  • Author

    Peng, Zhen ; Palego, Cristiano ; Halder, Subrata ; Hwang, James C M ; Jahnes, Christopher V. ; Etzold, K.F. ; Cotte, John M. ; Magerlein, John H.

  • Author_Institution
    Lehigh Univ., Bethlehem, PA
  • Volume
    8
  • Issue
    4
  • fYear
    2008
  • Firstpage
    642
  • Lastpage
    646
  • Abstract
    MEMS switches having separate signal and actuation electrodes with different air gaps are fabricated using a copper-based CMOS interconnect manufacturing process. By using a control voltage high enough to establish metal-metal contact between the signal electrodes while avoiding contact between the dielectric-covered actuation electrodes, dielectric charging appears to be tolerable. By simultaneously measuring the conductance across the signal electrodes and the capacitance across the actuation electrodes, the conductance-force characteristic can be readily monitored and analyzed. For the present switches, the effect of polarization charge appears to be negligible, and dielectric charging is significant only after dielectric contact is made and space charge is injected.
  • Keywords
    electrical conductivity; electrostatic actuators; microswitches; ohmic contacts; CMOS interconnect; MEMS ohmic switches; air gaps; capacitance; conductance; dielectric charging; electrostatic actuator; metal-metal contact; polarization charge; space charge; Air gaps; CMOS process; Dielectrics; Electrodes; Manufacturing processes; Micromechanical devices; Microswitches; Signal processing; Switches; Voltage control; Contact resistance; MEMS; dielectric films; microelectromechanical devices; microwave switches;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2008.2002539
  • Filename
    4700834